I can't help myself - see http://www.grist.org/article/Newt-Gingrich-is-an-idiot.
Sunday, December 11, 2011
Monday, November 28, 2011
Earth's Temperature Tracker
NASA has published a really great and condense explanation of global cooling and global warming trends through the years and looking forward. Check it out at http://www.giss.nasa.gov/research/features/200711_temptracker/. It is only 2 (web) pages and does a great job of summarizing major trend issues, including CO2, volcanoes, and greenhouse gases.
Saturday, November 12, 2011
GaN diode performance continues to advance past SiC theoretical limits
Because crystalline SiC materials development got real with early ONR and DARPA funding, SiC power electronics development has led to some great performances and the beginnings of commercialization, with SiC device results slowly getting closer to the theoretical limits of the SiC materials system.
However, we have known for decades that GaN should do better than SiC, and now that others, with Japan leading, are investing heavily in crystalline GaN materials technology, GaN devices are being demonstrated that surpass the theoretical limits of SiC devices. This article about R&D at Hosei Universiy and Hitachi Cable is yet another example of how crystalline GaN substrates enable us to cross that theoretical SiC performance limit.
With all else being equal, we would then predict that GaN is going to continue to get better and better and the day may be soon in which all GaN devices perform better than all SiC devices. But what about the price and the influence of other market dynamics? Well, the importance of GaN for solid state lighting and laser diodes means that GaN will continue to become more and more available in larger and larger form factor and a lower prices going forward, another reason to be "Long on GaN."
However, we have known for decades that GaN should do better than SiC, and now that others, with Japan leading, are investing heavily in crystalline GaN materials technology, GaN devices are being demonstrated that surpass the theoretical limits of SiC devices. This article about R&D at Hosei Universiy and Hitachi Cable is yet another example of how crystalline GaN substrates enable us to cross that theoretical SiC performance limit.
With all else being equal, we would then predict that GaN is going to continue to get better and better and the day may be soon in which all GaN devices perform better than all SiC devices. But what about the price and the influence of other market dynamics? Well, the importance of GaN for solid state lighting and laser diodes means that GaN will continue to become more and more available in larger and larger form factor and a lower prices going forward, another reason to be "Long on GaN."
Labels:
GaN,
power electronics,
SiC
Cissoid: The Leader in High Temperature Semiconductor Solutions
Cissoid is a company that appreciates the benefits of wide bandgap semiconductors for high performance applications in general, including those that must continue to perform at high temperatures. They are taking advantage of the fact that GaN has superb, and SiC almost as superb, a Baliga Figure of Merit, much better than Silicon itself.
Labels:
GaN,
high temperature,
power electronics,
SiC
Wednesday, June 8, 2011
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